Title :
Recent research development in physical design for manufacturability
Author :
Tai-Chen Chen ; Tai-Hung Li ; Bi-Ting Lai ; Yun-Chih Tsai
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Taoyuan, Taiwan
Abstract :
As IC process geometries scale down to the nanometer era, the industry faces severe challenges of manufacturing limitations. For the imperfect manufacturing process, physical design for manufacturability has played an essential role in resolution and thus yield enhancement to guarantee yield. In this paper, we introduce three major challenges arising from the nanometer process technology and survey major existing techniques for handling the challenges in physical design for manufacturability.
Keywords :
design for manufacture; integrated circuit yield; nanoelectronics; IC process geometries; imperfect manufacturing process; manufacturing limitations; nanometer era; nanometer process technology; physical design for manufacturability; yield enhancement; Computational modeling; Integrated optics; Layout; Lead; Optical coupling; Radar;
Conference_Titel :
Circuits and Systems (MWSCAS), 2011 IEEE 54th International Midwest Symposium on
Conference_Location :
Seoul
Print_ISBN :
978-1-61284-856-3
Electronic_ISBN :
1548-3746
DOI :
10.1109/MWSCAS.2011.6026536