• DocumentCode
    3406767
  • Title

    Free carrier absorption in red VCSELs

  • Author

    Pinches, S.M. ; Onischenko, A. ; Sale, T.E. ; Woodhead, J.

  • Author_Institution
    Dept. of Electron. & Electr. Eng., Sheffield Univ., UK
  • Volume
    2
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    794
  • Abstract
    Slope efficiency and threshold current density data as a function of wavelength for ~665 nm AlGaInP MQW DBR VCSELs are presented. This data indicates that free carrier absorption an important loss mechanism in red VCSELs
  • Keywords
    III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium compounds; indium compounds; infrared sources; laser transitions; light absorption; optical losses; quantum well lasers; surface emitting lasers; 665 nm; AlGaInP; AlGaInP MQW DBR VCSELs; free carrier absorption; loss mechanism; red VCSELs; slope efficiency; threshold current density data; Absorption; Mirrors; Optical losses; Optical scattering; Pulse measurements; Resonance; Substrates; Temperature; Threshold current; Vertical cavity surface emitting lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    LEOS '99. IEEE Lasers and Electro-Optics Society 1999 12th Annual Meeting
  • Conference_Location
    San Francisco, CA
  • ISSN
    1092-8081
  • Print_ISBN
    0-7803-5634-9
  • Type

    conf

  • DOI
    10.1109/LEOS.1999.811973
  • Filename
    811973
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3406767