A compact DC - 20 GHz SPDT switch circuit using lateral RF MEMS switches

Author

Tang, Min ; Liu, Ai Qun ; Agarwal, Ajay

Author_Institution

Inst. of Microelectron., Singapore, Singapore

Volume

2

fYear

2005

fDate

4-7 Dec. 2005

Abstract

A new single-pole-double-throw (SPDT) switch circuit using high-aspect-ratio lateral RF microelectromechanics system (MEMS) switches has been designed to operate from DC to 20 GHz. By using lateral switches and coplanar waveguide configuration, compactness and low-loss can be obtained. The circuit provides greater than 22 dB isolation and less than 0.9 dB insertion losses up to 20 GHz. A low-cost high-yield silicon-on-glass (SOG) fabrication process has been developed to fabricate this SPDT switch circuit. The size of the whole circuit is only 1.64 mm × 1.3 mm in area.

Keywords

coplanar waveguide components; microswitches; silicon; switching circuits; 20 GHz; Si; compact SPDT switch circuit; coplanar waveguide configuration; high yield SOG fabrication; lateral RF microelectromechanics system switches; low-cost silicon-on-glass fabrication process; single-pole-double-throw switch circuit; Communication switching; Fabrication; Glass; Insertion loss; Microswitches; Power semiconductor switches; Radiofrequency microelectromechanical systems; Silicon; Structural beams; Switching circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference Proceedings, 2005. APMC 2005. Asia-Pacific Conference Proceedings

Print_ISBN

0-7803-9433-X

Type

conf

DOI

10.1109/APMC.2005.1606530

Filename

1606530