DocumentCode
3406991
Title
Characteristics of Er3+:Al2O3 thin-films deposited by reactive co-sputtering for application in optical amplification
Author
Musa, S. ; van Weerden, H.J. ; Yau, T.H. ; Lambeck, P.V.
Author_Institution
MESA Res. Inst., Twente Univ., Enschede, Netherlands
Volume
2
fYear
1999
fDate
1999
Firstpage
818
Abstract
Er3+-doped Al2O3 films have been deposited by reactive co-sputtering onto thermally oxidized Si-wafers for use in optical amplification. Low background losses and broad emission band were measured. High concentration and gain can be achieved
Keywords
alumina; erbium; impurity absorption spectra; integrated optics; optical fabrication; optical films; optical losses; photoluminescence; solid lasers; sputtered coatings; waveguide lasers; Al2O3:Er; Er3+:Al2O3 thin-films; Low background losses; Si; absorption spectrum; broad emission band; gain; high concentration; integrated optical amplifiers; optical amplification; photoluminescence emission spectrum; reactive co-sputtering; thermally oxidized Si-wafers; Absorption; Annealing; Artificial intelligence; Erbium; Luminescence; Optical amplifiers; Optical films; Optical waveguides; Power amplifiers; Thin films;
fLanguage
English
Publisher
ieee
Conference_Titel
LEOS '99. IEEE Lasers and Electro-Optics Society 1999 12th Annual Meeting
Conference_Location
San Francisco, CA
ISSN
1092-8081
Print_ISBN
0-7803-5634-9
Type
conf
DOI
10.1109/LEOS.1999.811985
Filename
811985
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