• DocumentCode
    3406991
  • Title

    Characteristics of Er3+:Al2O3 thin-films deposited by reactive co-sputtering for application in optical amplification

  • Author

    Musa, S. ; van Weerden, H.J. ; Yau, T.H. ; Lambeck, P.V.

  • Author_Institution
    MESA Res. Inst., Twente Univ., Enschede, Netherlands
  • Volume
    2
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    818
  • Abstract
    Er3+-doped Al2O3 films have been deposited by reactive co-sputtering onto thermally oxidized Si-wafers for use in optical amplification. Low background losses and broad emission band were measured. High concentration and gain can be achieved
  • Keywords
    alumina; erbium; impurity absorption spectra; integrated optics; optical fabrication; optical films; optical losses; photoluminescence; solid lasers; sputtered coatings; waveguide lasers; Al2O3:Er; Er3+:Al2O3 thin-films; Low background losses; Si; absorption spectrum; broad emission band; gain; high concentration; integrated optical amplifiers; optical amplification; photoluminescence emission spectrum; reactive co-sputtering; thermally oxidized Si-wafers; Absorption; Annealing; Artificial intelligence; Erbium; Luminescence; Optical amplifiers; Optical films; Optical waveguides; Power amplifiers; Thin films;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    LEOS '99. IEEE Lasers and Electro-Optics Society 1999 12th Annual Meeting
  • Conference_Location
    San Francisco, CA
  • ISSN
    1092-8081
  • Print_ISBN
    0-7803-5634-9
  • Type

    conf

  • DOI
    10.1109/LEOS.1999.811985
  • Filename
    811985