DocumentCode :
3407291
Title :
Microchip lasers
Author :
Sinclair, Bruce D.
Author_Institution :
St. Andrews Univ., UK
Volume :
2
fYear :
1999
fDate :
1999
Firstpage :
850
Abstract :
Microchip lasers are made of a simple slice of solid-state laser material, coated on both sides, and pumped with a diode laser. This geometry forms a particularly simple laser cavity. The cavity, which is otherwise on the edge of stability, is made stable by thermal and gain-related effects, producing a high quality TEM00 laser beam. The simplicity leads to ease of mass-manufacture and low cost. The short length encourages single-frequency operation, and the short cavity decay time can allow the generation of short pulses. The extension of these ideas to involve additional intracavity components has allowed the demonstration of “simple” lasers that operate in an actively or passively Q-switched mode, lasers that are frequency agile, and CW and pulsed lasers that are frequency shifted into the visible and other spectral ranges. One part of our work has been in investigating the cavity stability mechanisms of these lasers. These can be thermally-related involving a distributed thermal lens through dn/dT effects or involving thermal expansion of the pumped face, or they can be gain-related involving elements of gain guiding or changes in refractive index associated with the spatially dependent gain. Such effects are strongly dependent on the gain material used. Under certain conditions we have observed a form of self-Q-switching in Nd:YVO4 microchip lasers, which our experiments and modelling suggest is associated with spatial variation of the gain and how this impacts on the guiding of different longitudinal modes
Keywords :
Q-switching; laser beams; laser modes; laser stability; micro-optics; microcavity lasers; neodymium; optical pulse generation; optical pumping; solid lasers; yttrium compounds; CW lasers; Nd:YVO4 laser; YVO4:Nd; actively Q-switched mode; cavity decay time; cavity stability mechanisms; diode laser; distributed thermal lens; dn/dT effects; frequency shift; gain guiding; gain material; gain-related effects; high quality TEM00 laser beam; intracavity components; longitudinal modes; microchip lasers; passively Q-switched mode; pulsed lasers; pumped face; refractive index; self-Q-switching; short pulses; simple laser cavity; simple lasers; single-frequency operation; solid-state laser material; spatial variation; spatially dependent gain; spectral ranges; stability; thermal effects; thermal expansion; visible range; Frequency; Laser excitation; Laser modes; Laser stability; Microchip lasers; Optical materials; Pump lasers; Solid lasers; Thermal expansion; Thermal lensing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
LEOS '99. IEEE Lasers and Electro-Optics Society 1999 12th Annual Meeting
Conference_Location :
San Francisco, CA
ISSN :
1092-8081
Print_ISBN :
0-7803-5634-9
Type :
conf
DOI :
10.1109/LEOS.1999.812001
Filename :
812001
Link To Document :
بازگشت