DocumentCode
3407431
Title
CNTFET gate design with tolerance to metallic CNTs
Author
Grigoleit, Florian ; Delgado-Frias, Jose G. ; Zhe Zhang
Author_Institution
Sch. of Electr. Eng. & Comput. Sci., Washington State Univ., Pullman, WA, USA
fYear
2011
fDate
7-10 Aug. 2011
Firstpage
1
Lastpage
4
Abstract
This study focuses on the design of logic gates built with Carbon Nanotube Field Effect Transistors (CNTFETs). Due to current fabrication issues, a certain percentage of the carbon nanotubes (CNTs) are not functioning as semiconductors but as simple conductors (called metallic CNTs). Therefore, it is necessary to arrange the transistors within a gate in a way that the character of the gate is maintained, while the performance is affected as little as possible. In this study an approach is described using one nanotube for more than one transistor.
Keywords
carbon nanotubes; field effect transistors; logic design; logic gates; CNTFET gate design; carbon nanotube field effect transistors; logic gates; metallic CNT; CNTFETs; Carbon; Computers; Carbon nanotubes; logic design; metallic CNTs;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems (MWSCAS), 2011 IEEE 54th International Midwest Symposium on
Conference_Location
Seoul
ISSN
1548-3746
Print_ISBN
978-1-61284-856-3
Electronic_ISBN
1548-3746
Type
conf
DOI
10.1109/MWSCAS.2011.6026573
Filename
6026573
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