Bias dependent performance of 1.55 μm absorption high-speed n-i-n photodetectors using low-temperature grown GaAs

Author

Chiu, Yi-Jen ; Zhang, Sheng Z. ; Kaman, Volkan ; Ibbetson, James P. ; Bowers, John E. ; Mishra, Umesh K.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

Volume

2

fYear

1999

fDate

1999

Firstpage

868

Abstract

We have successfully fabricated a novel n-i-n photodetector operating at 1.55 μm on GaAs. The characteristics at high-speed (above 20 GHz) and the high efficiency at high bias show that this kind of photodetector has potential application in the fields of long-wavelength optical-fiber communication and for integration with GaAs integrated circuits

Keywords

III-V semiconductors; absorption coefficients; frequency response; gallium arsenide; high-speed optical techniques; p-i-n photodiodes; photodetectors; 1.55 mum; GaAs; GaAs high-speed n-i-n photodetectors; GaAs integrated circuits; bias dependent performance; high efficiency; high-speed characteristics; long-wavelength optical-fiber communication; low-temperature grown GaAs; Absorption; Frequency response; Gallium arsenide; High speed optical techniques; Optical devices; Optical waveguides; PIN photodiodes; Photoconductivity; Photodetectors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

LEOS '99. IEEE Lasers and Electro-Optics Society 1999 12th Annual Meeting

Conference_Location

San Francisco, CA

ISSN

1092-8081

Print_ISBN

0-7803-5634-9

Type

conf

DOI

10.1109/LEOS.1999.812010

Filename

812010