Abstract :
In this paper, the feature of SiC WBG semiconductor is introduced. Compared with Si and GaAs semiconductor, SiC WBG power devices have excellent performance of output power, power density, operating frequency, operating bandwidth and so on. The SiC WBG semiconductor has been used to power module, which is used at 0.8~1.4 GHz of P-band. The output power is 300 W. Firstly, the total frame and main functions are constructed. Secondly, the key techniques in the circuit are simulated and optimized, which include wide-band divider/combine and power amplifier. Furthermore, simulation results and circuits layout are deeply analyzed. Finally, figures and test data of amplifiers are also presented. SiC WBG power devices can operate in CW or pulse mode, as single amplifier or basic amplifying unit of power amplifier module in radar.
Keywords :
integrated circuit layout; power amplifiers; radar; silicon compounds; wide band gap semiconductors; wideband amplifiers; SiC; circuits layout; frequency 0.8 GHz to 1.4 GHz; power 300 W; power amplifier module; pulse mode; radar; wide band gap power module design; wide band gap semiconductor; wide-band combine; wide-band divider; Couplers; Multichip modules; Power amplifiers; Power generation; Radar; Silicon carbide; Transmitters; SiC power device; power module; wide band gap (WBG) divider/combine;
