Design of a wideband active-buffered mixer in enhancement-mode GaAs pHEMT technology

Author

Chow, Yut-Hoong ; Yew, Lim-Guan ; Fuad, Haji-Mokhtar ; Ooi, Ben ; Vice, Michael

Author_Institution

Wireless Semicond. Div., Agilent Technol., Penang, Malaysia

Volume

3

fYear

2005

fDate

4-7 Dec. 2005

Abstract

A high linearity single balanced resistive FET mixer with conversion gain has been developed using 0.5 μm enhancement-mode pHEMT technology. The mixer consists of an integrated LO buffer amplifier which acts as an active balun, a resistive pHEMT mixer, and a differential cascode IF amplifier at the output. The IF amplifier output is matched to an output balanced impedance using a sum terminating diplexer. The mixer achieves an input IP3 of +23.5dBm with 9.5dB of conversion gain while consuming 110mA from a 5V supply. Useable RF frequency range is (450-2700 MHz).

Keywords

HEMT circuits; III-V semiconductors; UHF amplifiers; UHF mixers; UHF oscillators; baluns; buffer circuits; differential amplifiers; gallium arsenide; intermediate-frequency amplifiers; 0.5 micron; 110 mA; 450 to 2700 MHz; 5 V; 9.5 dB; FET mixer; GaAs; GaAs pHEMT technology; IF amplifier; LO buffer amplifier; active balun; active-buffered mixer; conversion gain; differential amplifier; enhancement-mode pHEMT technology; output balanced impedance; pHEMT mixer; sum terminating diplexer; wideband mixer; Broadband amplifiers; Differential amplifiers; FETs; Gallium arsenide; Impedance matching; Linearity; Mixers; PHEMTs; Radiofrequency amplifiers; Wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference Proceedings, 2005. APMC 2005. Asia-Pacific Conference Proceedings

Print_ISBN

0-7803-9433-X

Type

conf

DOI

10.1109/APMC.2005.1606594

Filename

1606594