Title :
Design and performance of a 1.6-2.2GHz low-noise, high gain dual amplifier in GaAs E-pHEMT
Author :
Chong, Thomas ; Rendava, Senjeev
Author_Institution :
Wireless Semicond. Div., Agilent Technol., Penang, Malaysia
Abstract :
The design and realization of a dual low-noise amplifier (LNA) module in the 2GHz band suitable for balanced receiver front-end application is presented. The module was designed to operate from a 5V supply with a control voltage for convenient adjustment of bias condition for optimum noise figure. The MMIC portion of the design was fabricated in Agilent Technologies´ proprietary 0.5μm GaAs enhancement-mode pseudomorphic high-electron-mobility transistor (e-pHEMT) process. This module is suitable for balanced amplifier applications when combined with external 3-dB hybrids, giving an extremely low noise figure (NF) of 0.55-0.8dB, coupled with a moderately high OIP3 (output third order intercept point) of 38-42dBm at 28-32dB gain. It is also capable of delivering a P-1dB of more than 20dBm at 180mA current drain.
Keywords :
III-V semiconductors; MMIC amplifiers; UHF amplifiers; gallium arsenide; high electron mobility transistors; integrated circuit design; low noise amplifiers; modules; 0.5 micron; 0.55 to 0.8 dB; 1.6 to 2.2 GHz; 180 mA; 28 to 32 dB; 5 V; GaAs; GaAs E-pHEMT; LNA module; MMIC; balanced amplifier; enhancement-mode high-electron-mobility transistor; high gain dual amplifier; low-noise amplifier; noise figure; output third order intercept point; pseudomorphic high-electron-mobility transistor; receiver front-end; Capacitors; Couplers; Gallium arsenide; Impedance matching; Inductors; Low-noise amplifiers; MMICs; Noise figure; Noise measurement; Performance gain; 3-dB hybrids; Balanced; GaAs; Low-noise amplifier; MMIC;
Conference_Titel :
Microwave Conference Proceedings, 2005. APMC 2005. Asia-Pacific Conference Proceedings
Print_ISBN :
0-7803-9433-X
DOI :
10.1109/APMC.2005.1606596
