DocumentCode
3408457
Title
Ge ion implantation for heterostructure formation in Si/Gex Si1-x heterojunction bipolar transistors
Author
Lombardo, S. ; Privitera, V. ; Spinella, C. ; Messina, A. ; Medulla, C. ; Pinto, A. ; Ward, P.
Author_Institution
Ist. di Metodologie e Tecnologie per la Microelettronica, CNR, Catania, Italy
Volume
1
fYear
1999
fDate
1999
Firstpage
118
Abstract
Si/GexSi1-x heterojunction n-p-n bipolar transistors (HBT) with a double polysilicon self-aligned structure were fabricated by using high dose Ge implantation for the formation of the Si/GexSi1-x heterostructure and BF2 implantation for base doping. The Si/GexSi1-x heterostructure fabrication profess is studied in terms of potential wafer throughput. HBT electrical performances are investigated and compared to reference pure Si transistors
Keywords
Ge-Si alloys; boron compounds; elemental semiconductors; heterojunction bipolar transistors; ion implantation; semiconductor device measurement; semiconductor doping; semiconductor materials; silicon; BF2 implantation; Ge ion implantation; HBT; Si/GexSi1-x heterojunction bipolar transistors; Si:BF2-GeSi; base doping; double polysilicon self-aligned structure; electrical performance; heterojunction n-p-n bipolar transistors; heterostructure formation; high dose Ge implantation; potential wafer throughput; Annealing; Contamination; Heterojunction bipolar transistors; Implants; Ion implantation; Isotopes; Molecular beam epitaxial growth; Pollution measurement; Solids; Throughput;
fLanguage
English
Publisher
ieee
Conference_Titel
Ion Implantation Technology Proceedings, 1998 International Conference on
Conference_Location
Kyoto
Print_ISBN
0-7803-4538-X
Type
conf
DOI
10.1109/IIT.1999.812066
Filename
812066
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