• DocumentCode
    3408519
  • Title

    Evolution of void layers induced by multiple He implants

  • Author

    Raineri, V. ; Saggio, M. ; Frisina, F. ; Rimini, E.

  • Author_Institution
    Ist. di Metodologie e Tecnologie per la Microelettronica, CNR, Catania, Italy
  • Volume
    1
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    130
  • Abstract
    Double He implants at 40 and 100 keV at several combinations of doses were performed in (100) silicon to form two layers of voids after annealing. Two layers of voids were observed only for thermal treatments lower than 1100°C, At higher temperatures a strong interaction between the two void bands is observed inducing their collapse into a single layer
  • Keywords
    annealing; bubbles; elemental semiconductors; helium; ion implantation; silicon; voids (solid); (100) silicon; 1100 C; 40 keV; 70 keV; Si:He; annealing; doses; double He implants; multiple He implants; thermal treatments; void collapse; void layers; Annealing; Chemicals; Helium; Implants; Impurities; Insulated gate bipolar transistors; Ion implantation; Microelectronics; Silicon; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ion Implantation Technology Proceedings, 1998 International Conference on
  • Conference_Location
    Kyoto
  • Print_ISBN
    0-7803-4538-X
  • Type

    conf

  • DOI
    10.1109/IIT.1999.812069
  • Filename
    812069
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3408519