Title :
Evolution of void layers induced by multiple He implants
Author :
Raineri, V. ; Saggio, M. ; Frisina, F. ; Rimini, E.
Author_Institution :
Ist. di Metodologie e Tecnologie per la Microelettronica, CNR, Catania, Italy
Abstract :
Double He implants at 40 and 100 keV at several combinations of doses were performed in (100) silicon to form two layers of voids after annealing. Two layers of voids were observed only for thermal treatments lower than 1100°C, At higher temperatures a strong interaction between the two void bands is observed inducing their collapse into a single layer
Keywords :
annealing; bubbles; elemental semiconductors; helium; ion implantation; silicon; voids (solid); (100) silicon; 1100 C; 40 keV; 70 keV; Si:He; annealing; doses; double He implants; multiple He implants; thermal treatments; void collapse; void layers; Annealing; Chemicals; Helium; Implants; Impurities; Insulated gate bipolar transistors; Ion implantation; Microelectronics; Silicon; Temperature;
Conference_Titel :
Ion Implantation Technology Proceedings, 1998 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4538-X
DOI :
10.1109/IIT.1999.812069
