DocumentCode :
3408619
Title :
Introducing the MC3 medium current 300 mm implanter
Author :
Campbell, Oliver F. ; Ray, Andrew M. ; Sugitani, Michiro ; Sato, Fumiaki
Author_Institution :
Semicond. Equip. Div., Eaton Corp., Austin, TX, USA
Volume :
1
fYear :
1999
fDate :
1999
Firstpage :
154
Abstract :
The MC3 is Eaton´s and Sumitomo Eaton Nova´s new medium-current 300 mm implanter designed to meet the demanding performance and Cost of Ownership (COO) requirements of 300 mm fabs. The MC3 design builds upon the production-proven performance of the Eaton 8250. In addition, complementary application space with Eaton´s HE3 and ULE3 enables a minimum COO for all known implant conditions. The MC3 delivers beam currents from 2 to 3500 pμA. The energy range is 3 to 750 keV. The modular design of the MC3 utilizes new design features to enhance serviceability and to reduce mean time to repair (MTTR). Extensive life cycle testing of modules in the development phase ensures a robust design. Furthermore, commonality on beamline design with the 8250 means excellent implanter process performance and beam purity, while control system commonality to other Eaton implanters greatly enhances ease of use
Keywords :
ion implantation; semiconductor device manufacture; semiconductor doping; 3 to 750 keV; 300 mm; MC3 medium current 300 mm implanter; beam currents; beam purity; control system commonality; energy range; enhance serviceability; extensive life cycle testing; implant conditions; modular design; process performance; reduce mean time to repair; Acceleration; Cities and towns; Costs; Electrostatics; Implants; Life testing; Power generation economics; Production; Robots; Valves;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Ion Implantation Technology Proceedings, 1998 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4538-X
Type :
conf
DOI :
10.1109/IIT.1999.812075
Filename :
812075
Link To Document :
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