• DocumentCode
    3408619
  • Title

    Introducing the MC3 medium current 300 mm implanter

  • Author

    Campbell, Oliver F. ; Ray, Andrew M. ; Sugitani, Michiro ; Sato, Fumiaki

  • Author_Institution
    Semicond. Equip. Div., Eaton Corp., Austin, TX, USA
  • Volume
    1
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    154
  • Abstract
    The MC3 is Eaton´s and Sumitomo Eaton Nova´s new medium-current 300 mm implanter designed to meet the demanding performance and Cost of Ownership (COO) requirements of 300 mm fabs. The MC3 design builds upon the production-proven performance of the Eaton 8250. In addition, complementary application space with Eaton´s HE3 and ULE3 enables a minimum COO for all known implant conditions. The MC3 delivers beam currents from 2 to 3500 pμA. The energy range is 3 to 750 keV. The modular design of the MC3 utilizes new design features to enhance serviceability and to reduce mean time to repair (MTTR). Extensive life cycle testing of modules in the development phase ensures a robust design. Furthermore, commonality on beamline design with the 8250 means excellent implanter process performance and beam purity, while control system commonality to other Eaton implanters greatly enhances ease of use
  • Keywords
    ion implantation; semiconductor device manufacture; semiconductor doping; 3 to 750 keV; 300 mm; MC3 medium current 300 mm implanter; beam currents; beam purity; control system commonality; energy range; enhance serviceability; extensive life cycle testing; implant conditions; modular design; process performance; reduce mean time to repair; Acceleration; Cities and towns; Costs; Electrostatics; Implants; Life testing; Power generation economics; Production; Robots; Valves;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ion Implantation Technology Proceedings, 1998 International Conference on
  • Conference_Location
    Kyoto
  • Print_ISBN
    0-7803-4538-X
  • Type

    conf

  • DOI
    10.1109/IIT.1999.812075
  • Filename
    812075