Beam purity control in the VIISta 810 implanter

Author

Smatlak, D.L. ; Scheuer, J. ; Renau, A. ; Cucchetti, A. ; Olson, J.

Author_Institution

Varian Ion Implant Syst., Gloucester, MA, USA

Volume

1

fYear

1999

fDate

1999

Firstpage

166

Abstract

Energy impurities in ion beams can result from dissociation of molecular ions or charge exchange by ions in the beam. Beam energy purity control in high and low energy implantation requires the removal of these unwanted components. Traditionally this is accomplished by using an electrostatic filter following mass analysis. In the Varian VIISta 810 200/300 mm medium current implanter a dual magnetic filter system is used to eliminate energy contamination. Moreover, unwanted beam elements are removed early in the beamline at low energy, and well away from the wafer. Low energy beam currents in VIISta 810 are enhanced by running the terminal in decel mode. Since there is no line of sight between the terminal and the wafer, energy contamination in decel mode is also eliminated. SIMS data will be presented to demonstrate the enhanced energy purity of the VIISta 810 beamline design

Keywords

ion implantation; particle beam diagnostics; semiconductor device manufacture; semiconductor doping; VIISta 810 implanter; beam purity control; charge exchange; decel mode; dissociation; dual magnetic filter system; electrostatic filter; energy contamination; energy impurities; high energy implantation; low energy implantation; mass analysis; unwanted beam elements; Acceleration; Contamination; Energy resolution; Filters; Implants; Impurities; Ion beams; Magnetic analysis; Magnetic separation; Particle beams;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology Proceedings, 1998 International Conference on

Conference_Location

Kyoto

Print_ISBN

0-7803-4538-X

Type

conf

DOI

10.1109/IIT.1999.812078

Filename

812078