DocumentCode
3408730
Title
Cost of ownership methodology for 300 mm ion implantation processes
Author
Parrill, T.M. ; Robak, K.
Author_Institution
Semicond. Equipment Div., Eaton Corp., Beverly, MA, USA
Volume
1
fYear
1999
fDate
1999
Firstpage
176
Abstract
IC manufacturers have stated that the price of 300 mm process equipment should be no more than 1.3 times the 200 mm equivalent equipment. Further, simultaneous technology advances are required for sub 0.25 μm processing, creating challenges for the equipment industry. Economic and technical issues differ among process equipment and must be addressed within the context of the process. This paper discusses the aspects of a cost of ownership methodology for wafer size increase and applies the method to high energy ion implantation processes. Depending on the productivity factors related to the number of chips per wafer, significant die cost reductions are available to IC manufacturers over a wide range of 300 mm equipment prices
Keywords
integrated circuit economics; integrated circuit manufacture; ion implantation; semiconductor device manufacture; semiconductor doping; 0.25 mum; 300 mm; 300 mm ion implantation processes; IC manufacturers; cost of ownership methodology; die cost reductions; equipment industry; high energy ion implantation processes; number of chips per wafer; sub 0.25 μm processing; technology advances; wafer size increase; Cost function; Ion implantation; Manufacturing industries; Manufacturing processes; Metrology; Power generation economics; Productivity; Safety; Semiconductor device manufacture; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Ion Implantation Technology Proceedings, 1998 International Conference on
Conference_Location
Kyoto
Print_ISBN
0-7803-4538-X
Type
conf
DOI
10.1109/IIT.1999.812081
Filename
812081
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