Dual-mode power amplifier for LTE handset applications using BiFET technology

Author

Bobae Kim ; Jongsoo Lee

Author_Institution

Sch. of Inf. & Commun., Gwangju Inst. of Sci. & Technol., Gwangju, South Korea

fYear

2011

fDate

7-10 Aug. 2011

Firstpage

1

Lastpage

4

Abstract

In this paper, dual mode output power amplifiers with high and low power mode for LTE handset applications have been presented. Recent compound semiconductor technology enables the PA designers to integrate InGaP/GaAs HBT with pHEMT on the same wafer, so called BiFET technology. Simple addition of the pHEMT switch for controlling high and low power mode to enhance the efficiency at lower output power makes it easy to design and implement the advanced transmitter for 4G wireless communications such as LTE. The fabricated power amplifier showed 19% PAE at 17dBm LPM (low power mode) and 36% at 27dBm HPM (high power mode) meeting all 3GPP output spectrum mask. It shows less than 2.5% EVM for all output power level from 824 ~ 849MHz (UMTS band 5).

Keywords

4G mobile communication; Long Term Evolution; heterojunction bipolar transistors; high electron mobility transistors; power amplifiers; 4G wireless communication; BiFET technology; InGaP/GaAs HBT; LTE handset application; compound semiconductor technology; dual mode output power amplifiers; dual-mode power amplifier; pHEMT; 3G mobile communication; Control systems; Heterojunction bipolar transistors; Lead; Optimized production technology; Radio frequency; Wireless communication;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems (MWSCAS), 2011 IEEE 54th International Midwest Symposium on

Conference_Location

Seoul

ISSN

1548-3746

Print_ISBN

978-1-61284-856-3

Electronic_ISBN

1548-3746

Type

conf

DOI

10.1109/MWSCAS.2011.6026646

Filename

6026646