The monolithic integration of InGaAs pHEMT and InGaP HBT technology for single-chip WiMAX RF front-end module

Wafer-level integration of GaAs enhancement-mode pHEMT, depletion-mode pHEMT and HBT (H2W is the code name at WIN) is a very appealing technology, which offers a number of significant advantages over conventional device technologies. In this paper, we report the development and mass-production status of the H2W at WIN Semiconductors. In addition to the device fabrication, we also demonstrate a single-chip RF front-end module for 2.6 GHz WiMAX application with H2W technology. The module integrated driver and power amplifiers, low-noise amplifier, bias-control circuit, power detector and antenna switch, which proves that this process is attractive technology for high-integrated circuit applications.