Diagnostics and modeling in the development of the VIISta 810 ion implanter

Author

Cucchetti, A. ; Renau, A. ; Buff, J.

Author_Institution

Varian Ion Implant Syst., Gloucester, MA, USA

Volume

1

fYear

1999

fDate

1999

Firstpage

211

Abstract

At different stages in the development of the VIISta 810, Varian´s new 200/300 mm medium current implanter, extensive experimental measurements were taken for a wide range of beams. These measurements included beam currents, beam profiles as well as vertical and horizontal emittances. In this paper, we discuss these results and their relevance in improving the beam line design. The experimental data collected at each phase of the machine development was used as input for the computer modeling of the successive stage of the beam line. Computer simulations were used as an integral and essential part of the development. Numerical simulations and experimental results are presented

Keywords

ion implantation; particle beam diagnostics; semiconductor device manufacture; semiconductor doping; VIISta 810 ion implanter; beam currents; beam profiles; computer modeling; diagnostics; horizontal emittances; machine development; medium current implanter; modeling; vertical emittances; Apertures; Computational modeling; Computer simulation; Contamination; Current measurement; Implants; Optical beams; Particle measurements; Pollution measurement; Position measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology Proceedings, 1998 International Conference on

Conference_Location

Kyoto

Print_ISBN

0-7803-4538-X

Type

conf

DOI

10.1109/IIT.1999.812089

Filename

812089