DocumentCode :
3408976
Title :
Optimization of the plasma-sputter-type negative ion source
Author :
Oomori, H. ; Kasuya, T. ; Wada, M. ; Horino, Y. ; Tsubouchi, N.
Author_Institution :
Dept. of Electron., Doshisha Univ., Kyoto, Japan
Volume :
1
fYear :
1999
fDate :
1999
Firstpage :
231
Abstract :
A study is being made to increase the beam current of the negative ions extracted from a plasma-sputter-type ion source operated with Cs. The result of the mass analysis showed that polyatomic carbon negative ions such as C3-, C4- and C 5- were extracted from the source with C- and C2ons. The percentages of the sum of C- and C2- currents to the total current increased by the Cs supply from 40% to 90%. To investigate the loss of negative carbon ions in the ion source plasma, the dependence of the ion beam currents on the gas pressure was measured. The C2- ion beam current took the maximum at 0.06 Pa ion source pressure with Ar plasma. The effective cross sections for electron detachment of C2- in Ar, Ne and He plasmas with electron density of 1011-1012 cm-3 and electron temperature of 2-6 eV were measured. They were 1.5±0.1×10-15 cm2, 1.8±0.1×10-15 cm2 and 1.4±0.1×10-15 cm2, for Ar, Ne and He respectively
Keywords :
electron detachment; ion sources; negative ions; plasma density; sputtering; beam current; electron density; electron detachment; gas pressure; mass analysis; negative ion source; plasma-sputter-type source; polyatomic carbon negative ions; Argon; Electrons; Helium; Ion beams; Ion sources; Particle beams; Plasma density; Plasma measurements; Plasma sources; Plasma temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Ion Implantation Technology Proceedings, 1998 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4538-X
Type :
conf
DOI :
10.1109/IIT.1999.812094
Filename :
812094
Link To Document :
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