DocumentCode :
3409208
Title :
8250 electrostatic clamp performance
Author :
Reimund, J. ; Lillian, P. ; Becker, K. ; St.Angelo, D.
Author_Institution :
Semicond. Equip. Div., Eaton Corp., Austin, TX, USA
Volume :
1
fYear :
1999
fDate :
1999
Firstpage :
280
Abstract :
The need for higher yields and reduced contamination have been driving factors for developing and using electrostatic wafer clamps. Electrostatic Clamps (ESC) do not make contact with the device side of the wafer which reduces particle adders. This feature increases the real estate available for devices on the wafer, increasing yield. Decreased exposure of the clamp mechanism to the ion beam also reduces contamination through sputtering. Wafer cooling using chilled fluid circulation within the electrostatic clamp yields heat transfer results of greater than 0.25 W/cm2 (100°C rise) without the aid of cooling gasses. Clamp alignment is made easier and quicker with the electrostatic clamp. Emphasis is placed on wafer cooling, surface particle and metal contamination data
Keywords :
cooling; electrostatic devices; heat transfer; integrated circuit yield; sputtering; surface contamination; 8250 electrostatic clamp performance; chilled fluid circulation; clamp alignment; clamp mechanism; contamination; electrostatic wafer clamps; heat transfer; ion beam; metal contamination; particle adders; sputtering; surface particle contamination; wafer cooling; yields; Assembly; Clamps; Cooling; Electrodes; Electrostatic measurements; Heat transfer; Nitrogen; Surface contamination; Temperature; Thermal conductivity;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Ion Implantation Technology Proceedings, 1998 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4538-X
Type :
conf
DOI :
10.1109/IIT.1999.812107
Filename :
812107
Link To Document :
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