Real-time monitoring of ion source plasma using optical emission spectroscopy

Author

Graf, Michael A. ; Benveniste, Victor

Author_Institution

Eaton Corp., Beverly, MA, USA

Volume

1

fYear

1999

fDate

1999

Firstpage

304

Abstract

Optical emission spectroscopy has been used to monitor in real-time the inductively coupled RF plasma in the ULE2 ion source. A model has been developed to correlate optical spectra from the source taken in the near-UV, visible, and near-IR regions of the spectrum with extracted ion beam constituents. Emission from atomic, ionic, and molecular lines and bands is used to develop the model. Neural network algorithms are used to assist in this development. The model shows good agreement with experimental results for all ion species extracted in beams run with BF₃, PH₃, AsH₃, and GeF ₄ source gases. Complete beam mass spectra can be predicted using only the optical spectra and used to aid in source tuning or cleaning procedures

Keywords

ion implantation; ion sources; monitoring; neural nets; plasma diagnostics; plasma materials processing; semiconductor doping; 13.56 MHz; AsH₃; BF₃; GeF₄; PH₃; ULE2 ion source; beam mass spectra; cleaning procedures; extracted ion beam constituents; inductively coupled RF plasma; ion implantation; ion source plasma; model; near-IR region; near-UV region; neural network algorithms; optical emission spectroscopy; optical spectra; real-time monitoring; semiconductor plasma processing; source gases; source tuning; visible region; Atom optics; Ion sources; Monitoring; Optical computing; Optical coupling; Particle beam optics; Plasma sources; Radio frequency; Spectroscopy; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology Proceedings, 1998 International Conference on

Conference_Location

Kyoto

Print_ISBN

0-7803-4538-X

Type

conf

DOI

10.1109/IIT.1999.812113

Filename

812113