DocumentCode :
3409371
Title :
Ion implanter with a magnetic neutral loop discharge (NLD) plasma ion source for surface modification
Author :
Matsuura, Masamichi ; Ohtsuka, Yoshiro ; Yokoo, Hidekazu ; Sakurada, Yuzo
Author_Institution :
ULVAC Japan Ltd., Kanagawa, Japan
Volume :
1
fYear :
1999
fDate :
1999
Firstpage :
315
Abstract :
An ion implanter, the ULVAC ILD-600, which employs a new broad-beam ion source termed a “magnetic neutral loop discharge (NLD) plasma ion source” has been developed. NLD plasma is a high density rf plasma produced in a magnetically neutral loop formed using two coaxial permanent magnets. The accelerating voltage of this ion source is 1-60 kV, its maximum ion beam current density is 50 μ A/cm 2, the effective diameter of the irradiated substrate area is 200 mm, and the uniformity of the ion beam is ±10%. Available ion species include N2+, O2+ and other gaseous ions. In order to carry out ion beam dynamic mixing for surface modification of precision molds, this ion implanter is equipped with an electron beam evaporator. TiN film with a Vickers hardness of 2000 was synthesized by N2 gas assisted ion beam dynamic mixing
Keywords :
Vickers hardness; discharges (electric); ion beam mixing; ion implantation; ion sources; plasma materials processing; protective coatings; titanium compounds; N2; N2 gas assisted ion beam dynamic mixing; N2+; O2; O2+; TiN; TiN film; ULVAC ILD-600; Vickers hardness; accelerating voltage; coaxial permanent magnets; electron beam evaporator; gaseous ions; high density RF plasma; ion beam current density; ion beam dynamic mixing; ion implanter; magnetic neutral loop discharge plasma ion source; precision molds; surface modification; Acceleration; Coaxial components; Fault location; Ion beams; Ion sources; Permanent magnets; Plasma accelerators; Plasma density; Plasma sources; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Ion Implantation Technology Proceedings, 1998 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4538-X
Type :
conf
DOI :
10.1109/IIT.1999.812116
Filename :
812116
Link To Document :
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