Development of a large-area beam mass analyzer

Author

Takahashi, Masato ; Sakai, Shigeki ; Aoki, Masahiko ; Tanjyo, Masayasu

Author_Institution

Nissin Electr. Co. Ltd., Kyoto, Japan

Volume

1

fYear

1999

fDate

1999

Firstpage

326

Abstract

In order to form an ultra-shallow junction in deep sub-micron devices using 12" wafer, a low energy (<1 keV) and high current (>10 mA) ion implantation is becoming essential. We introduce a new beam handling technique in which a large area and high current ion beam is mass-analyzed by a large-gap magnet. The magnet has individually current-controlled multiple coils wound on a window-frame yoke. A 1/5-model has been made to confirm the magnetic field strength, distribution, uniformity and index adjustment by control of the coil currents. The field mapping data of the magnet shows a promising nature as for the optical element

Keywords

beam handling techniques; ion implantation; semiconductor doping; beam handling technique; coil currents; current-controlled multiple coils; deep sub-micron devices; field mapping data; high current; index adjustment; ion implantation; large-area beam mass analyzer; large-gap magnet; low energy; magnetic field distribution; magnetic field strength; optical element; ultra-shallow junction; window-frame yoke; Coils; Current density; Ion beams; Ion implantation; Ion sources; Magnetic field measurement; Magnetic fields; Plasma accelerators; Space charge; Wounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology Proceedings, 1998 International Conference on

Conference_Location

Kyoto

Print_ISBN

0-7803-4538-X

Type

conf

DOI

10.1109/IIT.1999.812119

Filename

812119