A high-current negative ion implanter and its application for nanocrystal fabrication in insulators

Author

Kishimoto, N. ; Takeda, Y. ; Gritsyna, V.T. ; Iwamoto, E. ; Saito, T.

Author_Institution

Nat. Res. Inst. for Metals, Ibaraki, Japan

Volume

1

fYear

1999

fDate

1999

Firstpage

342

Abstract

A high-current negative-ion implanter, equipped with a plasma-sputter-type ion source, a strong beam transport and an irradiation chamber, has been developed and applied to modification for optical properties of insulators. Negative Cu ions of both a high flux and a low emittance demonstrate merits of efficient material modification for silica glasses. The implanter is capable for in-beam fabrication and morphology control of metal nanocrystals

Keywords

copper; insulators; ion implantation; ion sources; nanostructured materials; negative ions; sputtering; Cu; Cu^-; high-current negative ion implanter; insulators; irradiation chamber; material modification; metal nanocrystals; morphology control; nanocrystal fabrication; optical properties; plasma-sputter-type ion source; silica glasses; strong beam transport; Insulation; Ion sources; Particle beam optics; Particle beams; Plasma applications; Plasma materials processing; Plasma properties; Plasma sources; Plasma transport processes; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology Proceedings, 1998 International Conference on

Conference_Location

Kyoto

Print_ISBN

0-7803-4538-X

Type

conf

DOI

10.1109/IIT.1999.812123

Filename

812123