DocumentCode
3409571
Title
Beam characterizations of mass separated, low-energy positive and negative ions deposition apparatus
Author
Tsubouchi, N. ; Horino, Y. ; Wada, M. ; Oomori, H.
Author_Institution
Dept. of Mater. Phys., Osaka Nat Res. Inst., Japan
Volume
1
fYear
1999
fDate
1999
Firstpage
350
Abstract
The authors study properties of positive and negative ion beams mainly focused on the characterizations of the ion beam energy on a newly developed apparatus for isotopically mass separated, low-energy, positive and negative ions deposition. In the positive ion beam line, a plasma potential inside the ion source was about 50 to 100 V, depending on a gas pressure, a magnetron power and an applied magnetic field. It decreased with the increasing gas pressure and with decreasing the microwave power and the magnetic field. The energy spread (full width at half maximum) was about 8-10 eV almost independent of various parameters, for example, the gas pressure, ion species, etc. The fluctuation of the beam energy was about a few eV during ten hours
Keywords
ion beam assisted deposition; ion beams; ion sources; negative ions; positive ions; 50 to 100 V; 50 to 350 V; beam characterizations; ion beams; ion source; low-energy negative ions deposition apparatus; low-energy positive ions deposition apparatus; mass separated apparatus; plasma potential; Fault location; Fluctuations; Ion beams; Ion sources; Magnetic fields; Magnetic separation; Physics; Plasma properties; Plasma sources; Sputtering;
fLanguage
English
Publisher
ieee
Conference_Titel
Ion Implantation Technology Proceedings, 1998 International Conference on
Conference_Location
Kyoto
Print_ISBN
0-7803-4538-X
Type
conf
DOI
10.1109/IIT.1999.812125
Filename
812125
Link To Document