Title :
Enhancements to the Eaton GSD200 beamline for low energy boron operation
Author :
Splinter, P. ; Chen, J. ; Barusso, S. ; Fascetti, M.
Author_Institution :
Eaton Corp., Beverly, MA, USA
Abstract :
Enhancements to existing high current ion implanter beamlines can extend the use of this equipment to provide an operational bridge to the technology node of 0.18 μm. Through iterative improvements, the Eaten GSD200 has been modified to provide 4.5 times the beam current originally available for low energy boron production. This equipment uniquely supports modifications to the beam transport optics due to the design of the triple index analyzing magnet. In addition, space charge neutralization methods and beamline length reductions provide enhanced performance. Low energy boron beam current results and considerations for operation of traditional high current equipment at sub-10 keV will also be explored
Keywords :
beam handling equipment; boron; ion implantation; semiconductor doping; space charge; B; Eaton GSD200 beamline; beam current; beam transport optics; beamline length reductions; design; enhanced performance; high current ion implanter beamlines; low energy boron operation; low energy boron production; space charge neutralization methods; triple index analyzing magnet; Apertures; Boron; Electrodes; Ion sources; Magnetic separation; Optical beams; Optical design; Production; Space charge; Structural beams;
Conference_Titel :
Ion Implantation Technology Proceedings, 1998 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4538-X
DOI :
10.1109/IIT.1999.812129
