Uniformity and dosimetry study of the 30 kV Danfysik decel lens system

Author

Gwilliam, Russell ; Nejim, Ahmed ; Knights, Andrew ; Sealy, Brian

Author_Institution

Centre for Ion Beam Applications, Surrey Univ., Guildford, UK

Volume

1

fYear

1999

fDate

1999

Firstpage

377

Abstract

In this paper we report on the uniformity and the dosimetry achieved using a decel system designed by Danfysik and fitted to their high current DF1090 research implanter housed within the Surrey facility Energy contamination caused by charge exchange within the lens is addressed as is the effect of different accel-decel ratios on the implant uniformity in the energy range 1-10 keV. Uniformity measurements using optical techniques made on as-implanted wafers are compared to resistivity maps obtained following rapid thermal annealing. Ray diagrams from the modeling program Axcel have been used to explain the results obtained

Keywords

dosimetry; ion implantation; ion optics; rapid thermal annealing; semiconductor doping; 1 to 10 keV; 30 kV; Danfysik decel lens system; accel-decel ratios; as-implanted wafers; charge exchange; dosimetry; high current DF1090 research implanter; implant uniformity; modeling program Axcel; optical techniques; rapid thermal annealing; ray diagrams; resistivity maps; Conductivity; Contamination; Dosimetry; Implants; Lenses; Optical design; Pollution measurement; Rapid thermal annealing; Semiconductor device modeling; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology Proceedings, 1998 International Conference on

Conference_Location

Kyoto

Print_ISBN

0-7803-4538-X

Type

conf

DOI

10.1109/IIT.1999.812132

Filename

812132