DocumentCode
3409728
Title
High temperature operation of a dc-dc power converter utilizing SiC power devices
Author
Ray, Biswajit ; Scofield, James D. ; Spyker, Russell L. ; Jordan, Brett ; Ryu, Sei-Hyung
Author_Institution
Bloomsburg Univ., PA
Volume
1
fYear
2005
fDate
6-10 March 2005
Firstpage
315
Abstract
Performance of a 2 kW, 40 kHz, 270 V/500 V boost dc-dc power converter as a function of temperature is reported for the following power semiconductor device combinations: Si MOSFET and Si ultrafast diode, and SiC MOSFET and SiC Schottky diode. The test results clearly demonstrate the possibility of designing 200 degC power converters utilizing SiC power semiconductor devices
Keywords
DC-DC power convertors; MOSFET; Schottky diodes; power semiconductor devices; silicon compounds; wide band gap semiconductors; 2 kW; 200 degC; 270 V; 40 kHz; 500 V; MOSFET; Schottky diode; SiC; dc-dc power converter; power device; power semiconductor device; ultrafast diode; DC-DC power converters; Inductors; MOSFET circuits; Photonic band gap; Power MOSFET; Rectifiers; Schottky diodes; Silicon carbide; Temperature; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Applied Power Electronics Conference and Exposition, 2005. APEC 2005. Twentieth Annual IEEE
Conference_Location
Austin, TX
Print_ISBN
0-7803-8975-1
Type
conf
DOI
10.1109/APEC.2005.1452944
Filename
1452944
Link To Document