Title :
Development of cryopump for ion implantation equipment
Author :
Furuya, S. ; Terashima, M. ; Morimoto, H. ; Nishihashi, T. ; Kashimoto, K. ; Sakurada, Y.
Author_Institution :
ULVAC Cryogenics Inc., Kanagawa, Japan
Abstract :
We developed a new differential pumping type cryopump for implantation equipment, to effectively pumping outgases from resist on a wafer. This cryopump is installed between end station and magnet chamber, and forms a part of beam line. The pressure of acceleration tube may be decreased to less than 1E-4 Pa by using this cryopump. Usual case this pressure is more than 1E-3 Pa
Keywords :
beam handling equipment; cryopumping; ion implantation; outgassing; semiconductor device manufacture; semiconductor doping; 1E-4 Pa; acceleration tube pressure; beam line; cryopump; differential pumping type cryopump; end station; ion implantation equipment; magnet chamber; pumping outgas; Computer simulation; Contamination; Design automation; Exhaust systems; Fabrication; Ion implantation; Mass production; Resists; Substrates; Vacuum systems;
Conference_Titel :
Ion Implantation Technology Proceedings, 1998 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4538-X
DOI :
10.1109/IIT.1999.812137
