Title :
A 1.4 pJ/bit, Power-Scalable 16×12 Gb/s Source-Synchronous I/O With DFE Receiver in 32 nm SOI CMOS Technology
Author :
Dickson, Timothy O. ; Yong Liu ; Rylov, Sergey V. ; Agrawal, Ankur ; Seongwon Kim ; Ping-Hsuan Hsieh ; Bulzacchelli, John F. ; Ferriss, Mark ; Ainspan, Herschel A. ; Rylyakov, Alexander ; Parker, Benjamin D. ; Beakes, Michael P. ; Baks, Christian ; Lei Sh
Author_Institution :
IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
A power-scalable 2 Byte I/O operating at 12 Gb/s per lane is reported. The source-synchronous I/O includes controllable TX driver amplitude, flexible RX equalization, and multiple deskew modes. This allows power reduction when operating over low-loss, low-skew interconnects, while at the same time supporting higher-loss channels without loss of bandwidth. Transceiver circuit innovations are described including a low-skew transmission-line clock distribution, a 4:1 serializer with quadrature quarter-rate clocks, and a phase rotator based on current-integrating phase interpolators. Measurements of a test chip fabricated in 32 nm SOI CMOS technology demonstrate 1.4 pJ/b efficiency over 0.75” Megtron-6 PCB traces, and 1.9 pJ/b efficiency over 20” Megtron-6 PCB traces.
Keywords :
CMOS integrated circuits; clock distribution networks; computer peripheral equipment; decision feedback equalisers; driver circuits; silicon-on-insulator; transceivers; DFE receiver; Megtron-6 PCB traces; SOI CMOS technology; bit rate 12 Gbit/s; controllable TX driver amplitude; current-integrating phase interpolators; flexible RX equalization; low-skew transmission-line clock distribution; memory size 2 Byte; multiple deskew modes; phase rotator; quadrature quarter-rate clocks; serializer; size 32 nm; source-synchronous I-O; test chip; transceiver circuit innovations; CMOS integrated circuits; Clocks; Impedance; Power transmission lines; Timing; Transmitters; CTLE; Clock distribution; DFE; I/O; phase rotator; serializer; source synchronous;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2015.2412688
