• DocumentCode
    3409928
  • Title

    Measurement for divergence angle of ion beams extracted from the Bernas type ion source

  • Author

    Kunibe, Toshizyu ; Sasaki, Naruyasu ; Iwase, Yasuhiro ; Ogata, Seiji ; Shimizu, Saburo

  • Author_Institution
    ULVAC Japan Ltd., Kanagawa, Japan
  • Volume
    1
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    424
  • Abstract
    Divergence angle of ion beams extracted from the Bernas type ion source was measured by a movable Faraday cup for beam energy of 5 keV to 45 keV. High bias voltage of -5 kV to -35 kV was applied on a suppression electrode for obtaining low energy high current ion beams. The measured divergence was compared with computed divergence. Considerable increase of extracted ion beam current was obtained without remarkable divergence by applying high bias voltage on the suppression electrode
  • Keywords
    ion implantation; ion sources; particle beam diagnostics; particle beam extraction; particle beam focusing; semiconductor device manufacture; semiconductor doping; 5 to 35 kV; 5 to 45 keV; Bernas type ion source; divergence angle; high bias voltage; ion beams; low energy high current ion beams; movable Faraday cup; suppression electrode; Argon; Current density; Electrodes; Energy measurement; Goniometers; Ion beams; Ion sources; Particle beams; Pollution measurement; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ion Implantation Technology Proceedings, 1998 International Conference on
  • Conference_Location
    Kyoto
  • Print_ISBN
    0-7803-4538-X
  • Type

    conf

  • DOI
    10.1109/IIT.1999.812144
  • Filename
    812144