DocumentCode
3409928
Title
Measurement for divergence angle of ion beams extracted from the Bernas type ion source
Author
Kunibe, Toshizyu ; Sasaki, Naruyasu ; Iwase, Yasuhiro ; Ogata, Seiji ; Shimizu, Saburo
Author_Institution
ULVAC Japan Ltd., Kanagawa, Japan
Volume
1
fYear
1999
fDate
1999
Firstpage
424
Abstract
Divergence angle of ion beams extracted from the Bernas type ion source was measured by a movable Faraday cup for beam energy of 5 keV to 45 keV. High bias voltage of -5 kV to -35 kV was applied on a suppression electrode for obtaining low energy high current ion beams. The measured divergence was compared with computed divergence. Considerable increase of extracted ion beam current was obtained without remarkable divergence by applying high bias voltage on the suppression electrode
Keywords
ion implantation; ion sources; particle beam diagnostics; particle beam extraction; particle beam focusing; semiconductor device manufacture; semiconductor doping; 5 to 35 kV; 5 to 45 keV; Bernas type ion source; divergence angle; high bias voltage; ion beams; low energy high current ion beams; movable Faraday cup; suppression electrode; Argon; Current density; Electrodes; Energy measurement; Goniometers; Ion beams; Ion sources; Particle beams; Pollution measurement; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Ion Implantation Technology Proceedings, 1998 International Conference on
Conference_Location
Kyoto
Print_ISBN
0-7803-4538-X
Type
conf
DOI
10.1109/IIT.1999.812144
Filename
812144
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