Title :
A 1 V, 1.9 GHz mixer using a lateral bipolar transistor in CMOS
Author :
Ye, Song ; Yano, Koji ; Salama, C. Andre T
Author_Institution :
Toronto Univ., Ont., Canada
Abstract :
This paper describes a low power mixer implemented in a standard 0.25 um CMOS process. The mixer uses lateral bipolar transistors in CMOS to form the core of the circuit. No additional processing steps are needed to obtain the BJT when the MOSFET is properly designed. The mixer exhibits 6.5 dB gain, operating at 1.9 GHz from a 1 V supply and a power dissipation of 1.3 mW. Such a mixer is a likely candidate for low power portable wireless applications
Keywords :
CMOS analogue integrated circuits; UHF integrated circuits; UHF mixers; bipolar transistors; low-power electronics; 0.25 micron; 1 V; 1.3 mW; 1.9 GHz; 6.5 dB; BJT; CMOS process; MOSFET; RF circuit; lateral bipolar transistor; low-power mixer; BiCMOS integrated circuits; Bipolar transistors; CMOS process; CMOS technology; Educational institutions; MOSFET circuits; Micromechanical devices; RF signals; Radio frequency; Reluctance generators;
Conference_Titel :
Low Power Electronics and Design, International Symposium on, 2001.
Conference_Location :
Huntington Beach, CA
Print_ISBN :
1-58113-371-5
DOI :
10.1109/LPE.2001.945385
