SIMS modular approach to ultra-low energy implants for accurate TCAD process simulation modeling

The use of technology computer-aided design (TCAD) for IC design, technology development and semiconductor fabrication has grown. The motivation of new users of TCAD is to solve technology problems in the shortest time possible and at the lowest cost. TCAD programs allow process flows, as well as device and circuit performance to be simulated using a combination of simulation tools. TCAD modeling of MOS (metal oxide semiconductor) and bipolar technologies requires selective SIMS (secondary ion mass spectrometry) measurements for calibration. In this paper we present the SIMS Modular Approach to ultra-low energy (ULE) implants for accurate TCAD process simulation modeling. We will illustrate the principle of the SIMS Modular Approach with examples of ULE implants of boron, arsenic, and phosphorus that were unannealed (i.e., as implanted) and annealed. Our study showed that for a given ULE implant, several combinations of SIMS instruments and analytical conditions are needed to extract different information relating to the implant