Title :
Evaluation of high dose ion implantation by spectroscopic ellipsometry
Author :
Shibata, Satoshi ; Nambu, Yuko ; Etoh, Ryuji ; Fuse, Genshu
Author_Institution :
Matsushita Electron. Corp., Tonami, Japan
Abstract :
The thickness of amorphous layer formed by high dose ion implantation was measured by spectroscopic ellipsometry. The amorphous layer thickness, derived through a harmonic oscillator model using the spectroscopic ellipsometry data, is in good agreement with results by cross-sectional TEM and results for Monte-Carlo simulation of implant damage. Cross-wafer uniformity was also obtained for the thickness
Keywords :
amorphisation; arsenic; elemental semiconductors; ion implantation; semiconductor doping; silicon; Si:As; amorphous layer thickness; cross-wafer uniformity; harmonic oscillator model; high dose ion implantation; implant damage; spectroscopic ellipsometry; Amorphous materials; Electrical resistance measurement; Ellipsometry; Energy measurement; Implants; Ion implantation; Monitoring; Spectroscopy; Thickness measurement; Wavelength measurement;
Conference_Titel :
Ion Implantation Technology Proceedings, 1998 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4538-X
DOI :
10.1109/IIT.1999.812153
