Progress in ion implantation technology for advanced ULSI device fabrication

Ultra shallow junction formation is one of the crucial problems in the scaling of device size. Many methods have been proposed in order to fabricate junctions below 30 nm in devices below 0.1 μm. Advantages and problems for those methods are reviewed. Then, junction formation methods for 0.1-0.18 μm devices are proposed and important parameters to be solved are discussed. For devices below 0.1 μm, requirements for junction formation methods are summarized based on a discussion of device technology trends