Title :
Surface sensitive redistribution of low energy implanted B in Si substrate
Author :
Natsuaki, N. ; Shima, A. ; Honda, M. ; Nagayama, S. ; Sato, H. ; Hashimoto, T.
Author_Institution :
Device Dev. Center, Hitachi Ltd., Tokyo, Japan
Abstract :
The impact of the surface treatment on the redistribution of low energy implanted boron atoms is investigated for deep sub-micron ULSI processing. It is of importance to control the ambient and temperature, in respect to encapsulation, during annealing, as well as to screen oxide thickness and post-implant cleaning for dose retention and profile tailoring. An optimization of these factors is demonstrated for BF2 + implantation to form a shallow bipolar transistor base
Keywords :
ULSI; annealing; bipolar transistors; boron; doping profiles; elemental semiconductors; encapsulation; ion implantation; semiconductor doping; silicon; surface cleaning; BF2+ implantation; Si substrate; Si:B; Si:BF2; annealing; deep sub-micron ULSI processing; dose retention; encapsulation; low energy implanted B; low energy implanted boron atoms; oxide thickness; post-implant cleaning; profile tailoring; shallow bipolar transistor base; surface sensitive redistribution; surface treatment; Annealing; Bipolar transistors; Boron; Cleaning; Encapsulation; Surface treatment; Temperature control; Temperature sensors; Thickness control; Ultra large scale integration;
Conference_Titel :
Ion Implantation Technology Proceedings, 1998 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4538-X
DOI :
10.1109/IIT.1999.812155
