Title :
Influence of wafer backside organic contamination on GOI
Author :
Hayashi, Teruaki ; Kusakabe, Junji ; Yanagisawa, Yasunobu ; Kamata, Tadashi
Author_Institution :
Device Dev. Centre, Hitachi Ltd., Tokyo, Japan
Abstract :
The influence of wafer backside organic contamination caused by an ion implanter was investigated. When its wafer stage was contaminated with certain organic compounds such as DOP, they were transferred to the back surface of the wafer. A trace amount of such organic compounds remained even after wet cleaning, and degraded gate oxide integrity at high electric field region (10-12 MV/cm)
Keywords :
high field effects; ion implantation; organic compounds; semiconductor doping; surface cleaning; surface contamination; DOP; GOI; degraded gate oxide integrity; high electric field region; ion implanter; organic compounds; wafer backside organic contamination; wafer stage; wet cleaning; Cleaning; Dielectric measurements; Electrodes; MOS capacitors; Mass spectroscopy; Oxidation; Pollution measurement; Rubber; Surface contamination; Voltage;
Conference_Titel :
Ion Implantation Technology Proceedings, 1998 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4538-X
DOI :
10.1109/IIT.1999.812162
