Charge control performance of an ultra-low energy ion implanter

This paper describes an evaluation the charge control characteristics of an inline plasma cell installed at the end of the beamline on an Eaton NV-GSD/ULE2 (ULE) ultra-low energy ion implanter. The charge test vehicles used included Sematech Process-Induced Defect Effect Revealer-Manufacturing Equipment Monitor (SPIDER-MEM) devices and CHARM(R)-2 devices. Implants on these test vehicles were performed with varied plasma cell parameter settings. The results are compared with the performance of an Eaton NV-GSD200E (GSD) implanter with a secondary electron flood system (SEF) and another NV-GSD200E with a plasma flood system (PFS)