Title :
Retention of mask edge integrity during MeV implants
Author :
Hoglund, D.E. ; Parrill, T.M. ; Marshall, D.A. ; Ameen, M.S. ; Whiteside, D. ; Dahrooge, G.A. ; Takemura, M. ; Watt, V. ; Zhou, H.Q.
Author_Institution :
Implant Syst. Div., Eaton Corp., Beverly, MA, USA
Abstract :
The effect of increasing implant beam currents during MeV well implants on thick photoresist was evaluated in terms of critical dimension (CD) control and mask edge integrity, implant dosimetry, and post implant ashing. Hard bake, soft bake, and photostabilization pretreatments were quantified in terms of outgassing during implant, retention of mask edge integrity, and ability to ash without residues. The beam current of a 825 keV P implant (n-well) was successfully increased by a factor of four with no loss in CD control, implant or ashing performance
Keywords :
ion implantation; masks; outgassing; photoresists; 825 keV; MeV implants; critical dimension control; hard bake pretreatment; implant dosimetry; mask edge integrity retention; outgassing; photostabilization pretreatment; post implant ashing; soft bake pretreatment; thick photoresist; Ash; Dosimetry; Implants; Instruments; Performance loss; Resists; Scanning electron microscopy; Temperature; Thickness control; Throughput;
Conference_Titel :
Ion Implantation Technology Proceedings, 1998 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4538-X
DOI :
10.1109/IIT.1999.812168
