DocumentCode :
3410346
Title :
Long term time dependent variations in thermal wave monitor wafers
Author :
Kamenitsa, Dennis E. ; McCoy, William R. ; Ostrom, Lanny ; Zhou, Li
Author_Institution :
Semicond. Equip. Oper., Eaton Corp., Austin, TX, USA
Volume :
1
fYear :
1999
fDate :
1999
Firstpage :
529
Abstract :
Implanted reference wafers, often referred to as “golden wafers”, are generally used to verify the long term repeatability of metrology equipment and, by extension, the repeatability of the implantation process. This approach, while widely utilized, depends on the stability of the reference wafers themselves. The therma-wave therma-probe has become a standard monitoring tool for the ion implantation process. However, it is recognized that the thermal wave (TW) signal from implanted silicon wafers can significantly decrease over time. This is normally compensated for by an automatic correction routine in the TW measurement sequence referred to as “decay compensation”. Over longer periods of time, months or longer, this correction may prove insufficient to completely alleviate the signal change. We present data collected on the therma-probe model TP420 from a series of wafers showing the residual time dependent signal change that may remain after this automatic correction has been applied
Keywords :
ion implantation; photothermal effects; TP420; automatic correction routine; decay compensation; golden wafers; implanted reference wafers; ion implantation; long term repeatability; long term time dependent variations; metrology equipment; residual time dependent signal change; therma-wave therma-probe; thermal wave monitor wafers; Acceleration; Annealing; Boron; Implants; Ion implantation; Monitoring; Silicon; Stability; Temperature; Time measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Ion Implantation Technology Proceedings, 1998 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4538-X
Type :
conf
DOI :
10.1109/IIT.1999.812169
Filename :
812169
Link To Document :
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