Title :
High density, plasma flood system (HD PFS) yield enhancement for the precision implant 9500
Author :
Sempek, D. ; Ito, H. ; Asechi, H. ; Reilly, M. ; Vella, M.C.
Author_Institution :
Atmel Corp., Colorado Springs, CO, USA
Abstract :
Thinner gate insulators and larger effective antenna ratios require continuous improvement of charging control for leading edge devices. A beta version of the HD PFS demonstrated a yield advantage over the original 9500 PFS with new products. Split lots were run for high current implant of 0.50 micron EEPROM devices with a 10 nm gate oxide insulator. Initial beta service life was one month. Expected filament life is significantly longer
Keywords :
EPROM; ion implantation; semiconductor device manufacture; semiconductor doping; 0.5 mum; 0.50 micron EEPROM devices; 10 nm; 10 nm gate oxide insulator; beta service life; charging control; effective antenna ratios; filament life; high current implant; high density plasma flood system; leading edge devices; precision implant 9500; thinner gate insulators; yield enhancement; Flash memory; Floods; High definition video; Implants; Insulation; Plasma density; Plasma materials processing; Plasma sources; Plugs; Testing;
Conference_Titel :
Ion Implantation Technology Proceedings, 1998 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4538-X
DOI :
10.1109/IIT.1999.812172
