• DocumentCode
    3410390
  • Title

    High density, plasma flood system (HD PFS) yield enhancement for the precision implant 9500

  • Author

    Sempek, D. ; Ito, H. ; Asechi, H. ; Reilly, M. ; Vella, M.C.

  • Author_Institution
    Atmel Corp., Colorado Springs, CO, USA
  • Volume
    1
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    541
  • Abstract
    Thinner gate insulators and larger effective antenna ratios require continuous improvement of charging control for leading edge devices. A beta version of the HD PFS demonstrated a yield advantage over the original 9500 PFS with new products. Split lots were run for high current implant of 0.50 micron EEPROM devices with a 10 nm gate oxide insulator. Initial beta service life was one month. Expected filament life is significantly longer
  • Keywords
    EPROM; ion implantation; semiconductor device manufacture; semiconductor doping; 0.5 mum; 0.50 micron EEPROM devices; 10 nm; 10 nm gate oxide insulator; beta service life; charging control; effective antenna ratios; filament life; high current implant; high density plasma flood system; leading edge devices; precision implant 9500; thinner gate insulators; yield enhancement; Flash memory; Floods; High definition video; Implants; Insulation; Plasma density; Plasma materials processing; Plasma sources; Plugs; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ion Implantation Technology Proceedings, 1998 International Conference on
  • Conference_Location
    Kyoto
  • Print_ISBN
    0-7803-4538-X
  • Type

    conf

  • DOI
    10.1109/IIT.1999.812172
  • Filename
    812172
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3410390