Title :
Quantitative measurements of energy contamination in ULE2 deceleration
Author :
Halling, Mike ; Krull, Wade
Author_Institution :
Eaton Corp., Beverly, MA, USA
Abstract :
Deceleration is used in several new implanters to produce large fluxes of low energy ions, but charge exchange in the beamlines produces energy contamination. We have found that several issues must be addressed to obtain confident estimates of the energy contamination. Pre-amorphized wafers are used to eliminate channeling effects. A least squares fitting method is described that uses multiple drift mode reference profiles accommodate SIMS artifacts and variability. The limitations and accuracy of the method will be discussed
Keywords :
charge exchange; ion implantation; least squares approximations; secondary ion mass spectra; semiconductor doping; SIMS artifacts; Si; ULE2 deceleration; beamlines; charge exchange; energy contamination; implanters; large fluxes of low energy ions; least squares fitting method; multiple drift mode reference profiles; pre-amorphized wafers; quantitative measurements; variability; Atomic beams; Atomic measurements; Contamination; Crystallization; Energy measurement; Implants; Ion beams; Pollution measurement; Silicon; Tail;
Conference_Titel :
Ion Implantation Technology Proceedings, 1998 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4538-X
DOI :
10.1109/IIT.1999.812184
