Investigation of uniformity degradation by intentionally induced fast beam glitch with a disk-slot batch type endstation

Author

Grezeszak, Raymond ; Tokoro, Nobuhiro ; Bowen, Charles M. ; Richards, Steven ; Yashima, Katsuro

Author_Institution

Rgse Inc., Chelmsford, MA, USA

Volume

1

fYear

1999

fDate

1999

Firstpage

610

Abstract

Genus Inc. has recently developed unique circuitry to annihilate a source plasma by reducing the anode voltage of the ion source when a source glitch is detected (an arc recovery circuit). The use of this circuitry together with additional electronics enabled the introduction of artificial source glitches with time duration of 1 msec to 1.2 sec. at an arbitrary scan position triggered by a manual switch. In this work, a description of this instrument and the electrical measurements of source arc related phenomena are given. Actual measurements of uniformity degradation by intentionally induced beam glitches using this device have been performed as a function of scan numbers and duration of glitches with a disk-slot type hatch endstation

Keywords

beam handling techniques; ion implantation; ion sources; anode voltage; arc recovery circuit; disk-slot batch type endstation; fast beam glitch; ion source; scan number; source plasma annihilation; uniformity degradation; Anodes; Degradation; Electric variables measurement; Instruments; Ion sources; Performance evaluation; Plasma sources; Switches; Switching circuits; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology Proceedings, 1998 International Conference on

Conference_Location

Kyoto

Print_ISBN

0-7803-4538-X

Type

conf

DOI

10.1109/IIT.1999.812190

Filename

812190