High-speed semiconductor devices for communication systems

Author

Valsaraj, N. ; Sabbah, R. ; Jones, W. ; Ikossi-Anastasiou, K. ; Kyono, C.S. ; Binari, S.C. ; Kruppa, W. ; Dietrich, H.

Author_Institution

Dept. of Electr. & Comput. Eng., Louisiana State Univ., Baton Rouge, LA, USA

fYear

1996

fDate

31 Mar-2 Apr 1996

Firstpage

353

Lastpage

357

Abstract

The performance of Heterojunction Bipolar Transistors (HBTs) fabricated on novel quaternary InAlGaAs/InGaAs structures grown lattice matched on InP substrates are presented. For the first time the measured pulsed current voltage characteristics on InP HBT devices allow the direct observation of junction thermal effects. The incorporation of quaternary compounds contributes to a significant reduction of the negative resistance effects and an improvement of the output conductance making the devices reported suitable for applications in communication systems operating in microwave range frequencies

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; indium compounds; negative resistance; InAlGaAs-InGaAs; InP; heterojunction bipolar transistors; high-speed semiconductor devices; lattice matched growth; microwave communication systems; negative resistance; output conductance; pulsed current voltage characteristics; quaternary compounds; thermal effects; Current measurement; Electrical resistance measurement; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Lattices; Pulse measurements; Semiconductor devices; Substrates; Voltage measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

System Theory, 1996., Proceedings of the Twenty-Eighth Southeastern Symposium on

Conference_Location

Baton Rouge, LA

ISSN

0094-2898

Print_ISBN

0-8186-7352-4

Type

conf

DOI

10.1109/SSST.1996.493528

Filename

493528