Title :
/spl alpha/(6H)-SiC pressure sensors at 350/spl deg/C
Author :
Okojie, R.S. ; Ned, A.A. ; Kurtz, A.D. ; Carr, W.N.
Author_Institution :
Kulite Semicond. Products, Leonia, NJ, USA
Abstract :
6H-SiC piezoresistive pressure sensors operational at 350/spl deg/C, with potential to operate up to 600/spl deg/C, were batch fabricated and tested. The full scale output (FSO) was 87.89 mV and 38.21 mV at 23/spl deg/C and 350/spl deg/C, respectively, at full scale pressure of 1000 psi. No serious degradation was observed when operated for ten hours at 308/spl deg/C. The temperature coefficient of resistance (TCR) was 1.52%/100/spl deg/C and 16%/100/spl deg/C at 140/spl deg/C and 350/spl deg/C, respectively. The temperature coefficient of gauge factor (TCGF) exhibited negative values of -26.1%/100/spl deg/C and -17.55%/100/spl deg/C at 140/spl deg/C and 350/spl deg/C, respectively. This work demonstrated batch manufacturing and operation of pressure sensors for temperatures beyond silicon technology.
Keywords :
batch processing (industrial); etching; high-temperature techniques; piezoresistive devices; pressure sensors; semiconductor device metallisation; semiconductor device testing; semiconductor materials; silicon compounds; 1000 psi; 140 C; 23 C; 350 C; 38.21 mV; 6H-SiC piezoresistive pressure sensors; 87.89 mV; SiC; Ti-TiN-Pt-Au; batch manufacturing; full scale output; high temperature metallization scheme; operational characteristics; photoelectrochemical etching; temperature coefficient of gauge factor; temperature coefficient of resistance; Electromechanical sensors; Etching; Force measurement; Metallization; Piezoresistance; Resistors; Silicon carbide; Strain measurement; Temperature sensors; Titanium;
Conference_Titel :
Electron Devices Meeting, 1996. IEDM '96., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3393-4
DOI :
10.1109/IEDM.1996.554038
