DocumentCode :
341119
Title :
A highly sensitive CMOS compatible thermal-type microsensor
Author :
Sheen, Chin-Shown ; Chen, Chung-Nan
Author_Institution :
Dept. of Electro.-Opt. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Volume :
1
fYear :
1999
fDate :
1999
Firstpage :
464
Abstract :
A CMOS compatible thermal-type microsensor was fabricated with large sensitive area and ultra-low solid thermal-conductance. To reach high performance, a floating circular membrane with diameter, 460 μm and lead length, 393 μm, was formed after anisotropic etching the silicon substrate. The large membrane is well supported with four curved leads, which greatly release the residual stress. The highly sensitivity is reached by the extremely low solid conductance (10-6 W/C), which is lower than the published data; the large active area give better response than other works. Output voltage versus frequency was measured and thermal conductance was characterized by DC method
Keywords :
CMOS integrated circuits; elemental semiconductors; etching; infrared detectors; microsensors; silicon; 393 mum; 460 mum; CMOS compatible thermal-type microsensor; DC method; Si; Si substrate; anisotropic etching; floating circular membrane; output voltage; residual stress; solid conductance; solid thermal-conductance; thermal conductance; thermal microsensor; Anisotropic magnetoresistance; Biomembranes; Etching; Frequency; Lead; Microsensors; Residual stresses; Silicon; Solids; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Instrumentation and Measurement Technology Conference, 1999. IMTC/99. Proceedings of the 16th IEEE
Conference_Location :
Venice
ISSN :
1091-5281
Print_ISBN :
0-7803-5276-9
Type :
conf
DOI :
10.1109/IMTC.1999.776795
Filename :
776795
Link To Document :
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