DocumentCode
3411433
Title
Dielectric properties of capacitor materials in the optical frequency range
Author
Biegalski, Michael ; Thayer, Ryan ; Nino, Juan ; Trolier-McKinstry, Susan
Author_Institution
Dept. of Mater. Sci. & Eng., Pennsylvania State Univ., University Park, PA, USA
fYear
2002
fDate
28 May-1 June 2002
Firstpage
7
Lastpage
10
Abstract
The optical properties and band gaps of capacitor materials are important for a number of reasons, including assessing the viability of candidate materials for gate dielectrics in semiconductors, identifying the electronic components of the polarizability, and monitoring degradation processes. This paper reports the high frequency dielectric function of several capacitor materials in the near UV to near IR range as determined by spectroscopic ellipsometry. Spectroscopic ellipsometry was also be used to determine changes in the depth profile due to changes in the dielectric function. In this work dielectric materials, primarily strontium titanate, were examined to determine their changes during DC electric field induced degradation.
Keywords
ceramic capacitors; dielectric polarisation; ellipsometry; ferroelectric capacitors; ferroelectric ceramics; infrared spectra; permittivity; strontium compounds; ultraviolet spectra; visible spectra; DC electric field induced degradation; SrTiO3; band gaps; capacitor materials; degradation processes; depth profile; dielectric function; dielectric properties; electronic components; gate dielectrics; high frequency dielectric function; near UV to near IR range; optical frequency range; optical properties; polarizability; spectroscopic ellipsometry; Capacitors; Degradation; Dielectric materials; Electrochemical impedance spectroscopy; Ellipsometry; Frequency; Optical devices; Optical materials; Photonic band gap; Semiconductor materials;
fLanguage
English
Publisher
ieee
Conference_Titel
Applications of Ferroelectrics, 2002. ISAF 2002. Proceedings of the 13th IEEE International Symposium on
ISSN
1099-4734
Print_ISBN
0-7803-7414-2
Type
conf
DOI
10.1109/ISAF.2002.1195857
Filename
1195857
Link To Document