Title :
Improved quantum efficiency with increasing number of quantum dot sizes in silicon based solar cell
Author :
Kamal, F. ; Zaman, Umme Takia ; Salam, K.M.A. ; Sayeed, Kazi Abu ; Momen, Ahmed
Abstract :
Solar cells consisting of quantum dots of the same size have been worked on till date. Our work focuses on varying the size and increasing the Incident Photon to Current Conversion Efficiency of the intrinsic layer of a Silicon solar cell. We have been able to increase the IPCE up to 70% and 140% by widely varying the sizes of Cadmium Selenite and Cadmium Telluride quantum dots respectively. Their total volume fractions were kept constant.
Keywords :
elemental semiconductors; photons; silicon; solar cells; IPCE; cadmium selenite; cadmium telluride; current conversion efficiency; incident photon; intrinsic layer; quantum dot sizes; quantum efficiency; silicon based solar cell; Absorption; Cadmium; Mathematical model; Photonics; Photovoltaic cells; Quantum dots; Silicon; Absorption Coefficient; CdSe Quantum Dots; CdTe Quantum Dots; Different Sizes of Quantum Dots; Incident Photon to Current Conversion Efficiency; Quantum Dots; Quantum Efficiency;
Conference_Titel :
Advances in Electrical Engineering (ICAEE), 2013 International Conference on
Conference_Location :
Dhaka
Print_ISBN :
978-1-4799-2463-9
DOI :
10.1109/ICAEE.2013.6750306
