DocumentCode
3411589
Title
Improved quantum efficiency with increasing number of quantum dot sizes in silicon based solar cell
Author
Kamal, F. ; Zaman, Umme Takia ; Salam, K.M.A. ; Sayeed, Kazi Abu ; Momen, Ahmed
fYear
2013
fDate
19-21 Dec. 2013
Firstpage
64
Lastpage
68
Abstract
Solar cells consisting of quantum dots of the same size have been worked on till date. Our work focuses on varying the size and increasing the Incident Photon to Current Conversion Efficiency of the intrinsic layer of a Silicon solar cell. We have been able to increase the IPCE up to 70% and 140% by widely varying the sizes of Cadmium Selenite and Cadmium Telluride quantum dots respectively. Their total volume fractions were kept constant.
Keywords
elemental semiconductors; photons; silicon; solar cells; IPCE; cadmium selenite; cadmium telluride; current conversion efficiency; incident photon; intrinsic layer; quantum dot sizes; quantum efficiency; silicon based solar cell; Absorption; Cadmium; Mathematical model; Photonics; Photovoltaic cells; Quantum dots; Silicon; Absorption Coefficient; CdSe Quantum Dots; CdTe Quantum Dots; Different Sizes of Quantum Dots; Incident Photon to Current Conversion Efficiency; Quantum Dots; Quantum Efficiency;
fLanguage
English
Publisher
ieee
Conference_Titel
Advances in Electrical Engineering (ICAEE), 2013 International Conference on
Conference_Location
Dhaka
Print_ISBN
978-1-4799-2463-9
Type
conf
DOI
10.1109/ICAEE.2013.6750306
Filename
6750306
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