Heterojunction acoustic charge transport device technology

Author

Cullen, D.E. ; Tanski, W.J. ; Merritt, S.W. ; Sacks, R.N. ; Carroll, R.D. ; Branciforte, E.J.

Author_Institution

united Technol. Res. Center, East Hartford, CT, USA

fYear

1988

fDate

2-5 Oct 1988

Firstpage

135

Abstract

A brief description of the general acoustic charge transport (ACT) device and the operation of ACT devices is given. The application of GaAs-AlGaAs heterojunctions to ACT technology and the design of heterojunction ACT (HACT) devices is discussed. The performance characteristics of experimental HACT devices are presented. It is shown that Nyquist rate bandwidths with rolloffs less than 3dB can be obtained at signal output taps, and that transport currents of 100 μA can be carried by the SAW with less than 4 mW/λ acoustic drive power. In addition, heterojunction FETs (field-effect transistors) with gain up to 10 GHz have been fabricated on HACT substrates, illustrating the compatibility of integrated circuitry with the HACT device substrate

Keywords

surface acoustic wave devices; 10 GHz; 100 muA; FETs; GaAs-AlGaAs heterojunctions; Nyquist rate bandwidths; acoustic charge transport device; acoustic drive power; rolloffs; Acoustic devices; Acoustic waves; Bandwidth; Delay lines; Electrodes; Electrons; FETs; Gallium arsenide; Heterojunctions; Surface acoustic waves;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultrasonics Symposium, 1988. Proceedings., IEEE 1988

Conference_Location

Chicago, IL

Type

conf

DOI

10.1109/ULTSYM.1988.49357

Filename

49357