Title :
International conference on advances in electrical engineering title: Thermoelectric measurements of silicon nanowire arrays for the seebeck effect
Author_Institution :
Electr. & Electron. Eng., Southeast Univ., Nanjing, China
Abstract :
The project presents the comprehensive explanation to thermoelectronics and is intended to provide the details overview of all the techniques that are used throughout this research as well as the change in behaviors of the samples due to their doping levels and nanowire lengths. As examples of practical realization of the measurement principles, the setup is for Seebeck coefficient measurements which are the result of the slope of voltage gradient over temperature gradient. The comparisons among the measurements of each setup are done in order to understand and observe the electrical contacts and transport behaviors of the samples. Throughout the investigation, an interesting result has been found that is, the control sample without any grown nanowire gives very different results from the rest of them for almost all the measurements and the current - voltage curves seem to be more ohmic with the grown nanowires samples.
Keywords :
Seebeck effect; electrical contacts; elemental semiconductors; nanowires; silicon; Seebeck coefficient measurements; Seebeck effect; Si; current-voltage curves; doping levels; electrical contacts; measurement principles; nanowire lengths; silicon nanowire arrays; temperature gradient; thermoelectric measurements; thermoelectronics; to be more ohmic with the grown nanowires samples; transport behaviors; voltage gradient; Copper; Nanobioscience; Semiconductor device measurement; Silicon; Temperature measurement; Voltage measurement; KEY WORDS: Semiconductor; Nanowire; Seebeck Effect; Silicon; thermoelectric;
Conference_Titel :
Advances in Electrical Engineering (ICAEE), 2013 International Conference on
Conference_Location :
Dhaka
Print_ISBN :
978-1-4799-2463-9
DOI :
10.1109/ICAEE.2013.6750307